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SPICE MODEL of CSD20030D (Professional Model) in SPICE PARK

The document is a device modeling report for a silicon carbide Schottky diode (part number: CSD20030D) manufactured by Cree, Inc., detailing its electrical characteristics and simulation results. It includes parameters such as saturation current, junction capacitance, and forward current characteristics, with circuit simulation results showing error margins for measurements. The report also emphasizes copyright ownership by Bee Technologies Inc. from 2005.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: CSD20030D MANUFACTURER: Cree, Inc. REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 2.5V I(R1) V_V1 Evaluation Circuit R1 PIN1 0.01m PIN2 CASE PIN3 V1 U1 0Vdc CSD20030D 0 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VF(V) IF(A) Error(%) Measurement Simulation 0.1 0.555 0.552 -0.543 0.2 0.585 0.579 -1.036 0.5 0.620 0.619 -0.162 1 0.665 0.663 -0.302 2 0.728 0.733 0.682 6 0.970 0.971 0.103 8 1.080 1.080 0.000 10 1.200 1.195 -0.418 20 1.740 1.735 -0.288 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result 500p 400p 200p 0 1.0V 10V 100V I(V2)/(300V/1us) V(N00016) Evaluation Circuit 0Vdc V2 PIN1 V2 = 300 V1 PIN2 CASE V1 = 0 TD = 0 PIN3 TR = 1us U1 TF = 10ns CSD20030D PW = 50us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) VR(V) Error(%) Measurement Simulation 1.000 450.000 449.000 0.222 2.000 370.000 371.000 0.270 5.000 267.000 265.000 0.749 10.000 199.000 197.000 1.005 20.000 143.000 142.500 0.350 50.000 92.000 91.200 0.870 100.000 66.000 65.000 1.515 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result 500uA 400uA 200uA 0A 0V 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 0.01m PIN1 PIN2 CASE V1 0Vdc PIN3 U1 CSD20030D 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VR(V) IR(uA) Error(%) Measurement Simulation 10 340.000 338.000 -0.592 20 355.000 354.000 -0.282 50 379.000 378.700 -0.079 100 399.000 397.700 -0.327 200 419.000 417.600 -0.335 300 431.000 429.700 -0.303 400 439.500 438.500 -0.228 500 447.000 445.050 -0.438 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005