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SPICE MODEL of CSD10060G(Cree)

The document is a device modeling report for a silicon carbide Schottky diode (part number: CSD10060G) manufactured by Cree, Inc. It includes technical specifications, simulation results for forward and reverse characteristics, as well as comparisons between measured and simulated data across various parameters. The report emphasizes simulation accuracy and contains copyright notices from Bee Technologies Inc.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: CSD10060G MANUFACTURER: Cree, Inc. REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V I(R1) V_V1 Evaluation Circuit R1 PIN2 CASE 0.01m PIN1 V1 U1 SD10060G 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VF(V) IF(A) Error(%) Measurement Simulation 0.1 0.895 0.894 -0.112 0.2 0.915 0.916 0.109 0.5 0.960 0.957 -0.313 1 1.000 0.989 -1.112 2 1.070 1.065 -0.469 5 1.250 1.245 -0.402 10 1.500 1.510 0.662 20 2.050 2.040 -0.490 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result 400p 300p 200p 100p 0 3.0V 10V 100V 200V I(V2)/(600V/1us) V(N00016) Evaluation Circuit V2 0Vdc PIN1 V2 = 600 V1 CASE V1 = 0 PIN2 TD = 0 TR = 1us U1 SD10060G TF = 10ns PW = 50us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) VR(V) Error(%) Measurement Simulation 5 304.000 305.500 0.491 10 238.000 237.500 -0.211 20 180.000 179.900 -0.056 50 121.000 121.500 0.412 100 90.000 90.000 0.000 200 66.000 66.200 0.302 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result 100uA 80uA 60uA 40uA 20uA 0A 0V 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 0.01m PIN1 CSAE PIN2 V1 0Vdc U1 CSD10060G 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VR(V) IR(uA) Error(%) Measurement Simulation 1 378.000 376.700 -0.345 2 418.000 417.200 -0.192 5 473.000 471.000 -0.425 10 511.000 511.500 0.098 20 553.000 552.000 -0.181 50 607.000 606.000 -0.165 100 648.000 647.000 -0.155 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005