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CSD20060Dのスパイスモデルの検証データ

This document summarizes the specifications and simulation results of a silicon carbide schottky diode model. It includes the component details, model parameters, and comparison of simulated and measured forward voltage, junction capacitance, and reverse leakage characteristics. The simulations closely match the measured performance with errors generally less than 1%.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: CSD20060D MANUFACTURER: Cree, Inc. REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V I(R1) V_V1 Evaluation Circuit R1 PIN1 0.01m PIN2 CASE PIN3 V1 U1 0Vdc CSD20060D 0 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VF(V) IF(A) Error(%) Measurement Simulation 0.1 0.890 0.893 0.336 0.2 0.915 0.916 0.109 0.5 0.960 0.955 -0.524 1 1.000 1.000 0.000 2 1.070 1.066 -0.375 5 1.250 1.240 -0.806 10 1.500 1.510 0.662 20 2.050 2.030 -0.985 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result 300p 200p 100p 0 5.0V 10V 100V 300V I(V2)/(600V/1us) V(N00016) Evaluation Circuit 0Vdc V2 PIN1 V2 = 600 V1 PIN2 CASE V1 = 0 TD = 0 PIN3 TR = 1us U1 TF = 10ns CSD20060D PW = 50us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) VR(V) Error(%) Measurement Simulation 5 288.000 289.000 0.346 10 238.000 235.000 -1.277 20 181.000 182.000 0.549 50 124.000 123.888 -0.090 100 92.000 91.500 -0.546 200 67.000 67.000 0.000 300 57.000 56.000 -1.786 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result 200uA 150uA 100uA 50uA 0A 0V 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 0.01m PIN1 PIN2 CASE V1 0Vdc PIN3 U1 CSD20060D 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VR(V) IR(uA) Error(%) Measurement Simulation 1 405.000 403.000 -0.496 2 426.000 430.000 0.930 5 480.000 476.000 -0.840 10 511.000 510.000 -0.196 20 545.000 547.000 0.366 50 602.000 601.584 -0.069 100 646.000 645.844 -0.024 200 696.000 695.000 -0.144 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005