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SPICE MODEL of IDH03SG60C (Professional Model) in SPICE PARK

The document details the device modeling report for the silicon carbide Schottky diode IDH03SG60C, manufactured by Infineon, including various circuit configurations and simulation results. It presents parameters such as saturation current, series resistance, and reverse breakdown voltage, along with circuit simulation outcomes for forward current, reverse current, and junction capacitance characteristics. Comparison tables highlight the performance and accuracy of the model against measured values.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDH03SG60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 IDH03SG60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDH03SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.840 0.852 1.43 0.2 0.938 0.940 0.21 0.5 1.125 1.113 -1.07 1 1.343 1.336 -0.52 2 1.719 1.726 0.41 3 2.094 2.093 -0.05 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit R1 0.01m V1 U1 IDH03SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result Comparison table IR (nA) VR (V) %Error Measurement Simulation 100 1.300 1.304 0.33 200 2.700 2.716 0.60 400 19.500 20.267 3.93 600 200.000 194.911 -2.54 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 80p 70p 60p 50p 40p 30p 20p 10p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDH03SG60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 1 60.000 60.057 0.10 2 52.500 52.590 0.17 5 40.500 40.686 0.46 10 32.000 31.944 -0.18 20 24.600 24.464 -0.55 50 16.600 16.761 0.97 100 12.500 12.505 0.04 200 9.300 9.283 -0.18 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9