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Free SPICE Model of S3K60 in SPICE PARK

This document provides a device modeling report for the S3K60 general-purpose rectifier diode manufactured by Shindengen. It includes SPICE model parameters, circuit simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, along with comparative error metrics. Detailed measurement data and error analysis are presented within the context of simulated versus actual performance.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: S3K60 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
SPICE MODEL *$ * P ART NUMBER: S3K60 * M ANUF ACTURER: SHINDENGEN * VRRM=600,IO=3 A * All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008 .MODEL DS3K60 D + IS=220.18E-6 + N=4.7950 + RS=18.724E- 3 + IKF=3.2507 + CJO=116.42E-12 + M=.37144 + VJ=.3905 + ISR=0 + BV=600 + IBV=10.000E-6 + TT=75.96E-9 *$ All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc D1 DS3K60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.780 0.763 -2.21 0.2 0.845 0.852 0.83 0.5 0.960 0.977 1.77 1 1.058 1.082 2.27 2 1.204 1.205 0.08 5 1.421 1.426 0.32 10 1.670 1.668 -0.12 20 2.040 2.019 -1.03 50 2.834 2.806 -1.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
Capacitance Characteristic Circuit Simulation Result 100p 10p 1.0V 10V 100V I(V2)/(600V/1u) V(N11503) Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 600V D1 TD = 0 DS3K60 TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 1 72.500 72.978 0.66 2 60.000 59.755 -0.41 5 43.400 44.261 1.98 10 34.200 34.808 1.78 20 26.700 27.174 1.78 50 18.900 19.497 3.16 100 15.600 15.200 -2.56 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.92us 20.00us 20.08us 20.16us 20.24us 20.32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.1V V2 = 10.8V TD = 6ns V1 TR = 10ns D1 TF = 1ns DS3K60 PER = 50us PW = 20us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 29.60 29.11 -1.64 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-
Reverse Recovery Characteristic Reference Measurement Trj =29.60(ns) Trb= 68.80(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -9-