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Free SPICE Model of D1NL20U in SPICE PARK

The document contains a device modeling report for the D1NL20U diode manufactured by Shindengen, detailing its SPICE model parameters and circuit simulation results. It includes characteristics like forward current, capacitance, and reverse recovery, along with comparison graphs indicating measurement errors. The report is copyrighted by Bee Technologies Inc. and provides essential values for accurate electronic circuit simulations.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: D1NL20U MANUFACTURER: SHINDENGEN REMARK: TC=25C Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
SPICE MODEL *$ * PART NUMBER: D1NL20U * MANUFACTURER: SHINDENGEN * All Rights Reserved Copyright (C) Bee Technologies Inc.2005 .MODEL D1NL20U_s D + IS=130.95E-9 + N=1.8460 + RS=75.622E-3 + IKF=11.104 + ISR=0 + CJO=80.015E-12 + M=.43833 + VJ=.61789 + BV=200 + IBV=10.000E-6 + TT=27.116E-9 *$ PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 100mV 1.0V 5.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 D1 0Vdc D1NL20U_S 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.538 0.537 0.186 0.02 0.575 0.576 -0.174 0.05 0.620 0.619 0.161 0.1 0.655 0.656 -0.153 0.2 0.695 0.694 0.144 0.5 0.761 0.762 -0.131 1 0.835 0.834 0.120 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Capacitance Characteristic Circuit Simulation Result 100p 10p 1.0p 100mV 1.0V 10V 100V I(V2)/(200V/1u) V(N00016) Evaluation Circuit V2 0Vdc V2 = 200 V1 V1 = 0 D1 TD = 0 TR = 1us TF = 10ns D1NL20U_S PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 80.123 80.123 0.00 0.1 74.873 75.131 -0.34 0.2 70.813 70.830 -0.02 0.5 61.405 61.746 -0.56 1 52.473 52.521 -0.09 2 42.600 42.458 0.33 5 30.635 30.433 0.66 10 23.100 22.981 0.52 20 17.150 17.218 -0.40 50 11.448 11.161 2.51 100 8.418 8.581 -1.94 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Circuit Simulation Result 200mA 0A -200mA 19.95us 20.00us 20.05us 20.10us 20.15us I(R1) Time Evaluation Circuit R1 50 V1 = -9.39V V1 V2 = 10.7V D1 TD = 0 TR = 10ns TF = 10ns D1NL20U_S PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trr 22.40 ns 22.38 ns 0.089 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Reference Measurement Trj =10.4 (ns) Trb= 12.0 (ns) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005