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SPICE MODEL of MA4S111 (Standard Model) in SPICE PARK

This document summarizes the modeling of a Panasonic MA4S111 general purpose diode. It includes: 1) Details of the diode components and part number. 2) Descriptions of the diode model parameters in PSpice software. 3) Simulation results of the diode's forward and reverse characteristics compared to measurements. 4) The diode junction capacitance characteristic from simulation. 5) Reverse recovery time characteristics from simulation and measurement.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: MA4S111 MANUFACTURER: Panasonic Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration D1 DMA4S111 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 1.0KA 100A 10A 1.0A 100mA 10mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation circuit R1 0.01m V1 D1 DMA4S111 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result Comparison table VF (V) IF (mA) %Error Measurement Simulation 0.05 0.483 0.478 -1.04 0.1 0.516 0.512 -0.78 0.2 0.543 0.546 0.55 0.5 0.590 0.591 0.17 1 0.623 0.625 0.32 2 0.660 0.660 0.00 5 0.706 0.708 0.28 10 0.750 0.747 -0.40 20 0.796 0.791 -0.63 50 0.860 0.864 0.47 100 0.930 0.930 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Junction Capacitance Characteristic Circuit Simulation result 1.2p 1.0p 0.8p 0.6p 0.4p 0.2p 0 0V 20V 40V 60V 80V 100V 120V I(V2)/(100V/10ns) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 D1 V2 = 100 DMA4S111 TD = 0 TR = 10ns TF = 10ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 2 0.477 0.473 -0.84 5 0.460 0.467 1.52 10 0.450 0.463 2.89 20 0.437 0.454 3.89 50 0.437 0.437 0.00 80 0.437 0.423 -3.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Reverse Recovery Characteristics Circuit Simulation result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.97us 0.99us 1.01us 1.03us 1.05us 1.07us I(D1) Time Evaluation circuit R1 50 V1 = -9.47V V1 V2 = 10.54V D1 TD = 0 DMA4S111 TR = 10n TF = 1n PW = 1u PER = 100u 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 3.60 3.70 2.78 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Reverse Recovery Characteristics Reference Measurement Trj = 3.60 (ns) Trb = 2.00 (ns) Conditions: Ifwd = lrev = 0.20(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9