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SPICE MODEL of 1SS184 (Standard Model) in SPICE PARK

The document details the device modeling report for the diode rectifier model 1SS184 produced by Toshiba Bee Technologies, focusing on key parameters and characteristics including forward current, junction capacitance, and reverse recovery. Simulation results are compared against measurements, revealing a high degree of accuracy with minor percentage errors. The report includes various circuit configurations and simulation data relevant to the diode's performance.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: 1SS184 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration D1 D1SS184 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation circuit R1 0.001m V1 0V D1 D1SS184 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.0001 0.493 0.492 -0.09 0.0002 0.528 0.526 -0.40 0.0005 0.571 0.571 0.09 0.001 0.607 0.605 -0.35 0.002 0.641 0.640 -0.25 0.005 0.685 0.686 0.23 0.01 0.724 0.724 0.06 0.02 0.765 0.766 0.13 0.05 0.833 0.834 0.17 0.1 0.909 0.908 -0.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Junction Capacitance Characteristic Circuit Simulation result 2.0p 1.6p 1.2p 0.8p 0.4p 0 100mV 1.0V 10V 100V I(V2)/(85V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 D1 V2 = 85 D1SS184 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 0.902 0.898 -0.51 0.2 0.898 0.896 -0.17 0.5 0.889 0.892 0.34 1 0.884 0.884 -0.03 2 0.867 0.873 0.70 5 0.844 0.847 0.31 10 0.818 0.817 -0.15 20 0.784 0.781 -0.46 50 0.733 0.727 -0.81 80 0.693 0.700 1.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Reverse Recovery Characteristics Circuit Simulation result 400mA 200mA 0A -200mA -400mA 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us I(R1) Time Evaluation circuit R1 V1 = -9.4V 50 V2 = 10.99V TD = 0ns V1 TR = 3ns D1 TF = 2.85ns D1SS184 PW = 1us PER = 100us 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 8.640 8.643 0.03 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Reverse Recovery Characteristics Reference Measurement Trj = 8.64(ns) Trb = 5.28(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9