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Free SPICE Model of 1SS400 in SPICE PARK

This document summarizes the key parameters and SPICE model of the 1SS400 general purpose rectifier diode from manufacturer ROHM. It includes: 1) The diode's components, part number, manufacturer, and SPICE model parameters. 2) Graphs comparing the diode's simulated and measured forward voltage, capacitance, and reverse recovery characteristics. 3) The simulation results show good agreement with measurements, validating the accuracy of the SPICE model.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: 1SS400 MANUFACTURER: ROHM Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
SPICE MODEL *$ * P ART NUMBER: 1SS400 * M ANUF ACTURER: ROHM * VRM=80,IO=100m * All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008 .MODEL D1SS400 D + IS=6.5141E-9 + N=1.9171 + RS=1.0000E- 6 + IKF=12.751E-3 + CJO=541.55E-15 + M=.10579 + VJ=9.9900 + ISR=0 + BV=100 + IBV=100.00E-12 + TT=10.293E-9 *$ All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
Forward Current Characteristic Circuit Simulation Result 100mA 10mA 1.0mA 100uA 10uA 0V 0.1V 0.3V 0.5V 0.7V 0.9V 1.1V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc D1 D1SS400 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.00001 0.362 0.364 -0.55 0.00002 0.397 0.398 -0.25 0.00005 0.441 0.443 -0.45 0.0001 0.482 0.478 0.83 0.0002 0.515 0.513 0.39 0.0005 0.561 0.559 0.36 0.001 0.597 0.594 0.50 0.002 0.628 0.630 -0.32 0.005 0.680 0.681 -0.15 0.01 0.721 0.725 -0.55 0.02 0.777 0.776 0.13 0.05 0.861 0.857 0.46 0.1 0.921 0.923 -0.22 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
Capacitance Characteristic Circuit Simulation Result 10p 1.0p 100f 2V 5V 10V 15V I(V2)/(80V/1u) V(N11503) Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 80V D1 TD = 0 D1SS400 TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 2 0.532 0.531 -0.19 3 0.527 0.527 0.00 4 0.522 0.523 0.17 5 0.518 0.519 0.19 10 0.503 0.503 0.00 15 0.492 0.491 -0.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.98us 20.00us 20.02us 20.04us 20.06us 20.08us I(R1) Time Evaluation Circuit R1 50 V1 = -9.1V V2 = 11V TD = 12ns V1 TR = 10ns D1 TF = 15ns D1SS400 PER = 50us PW = 20us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 7.40 7.70 4.04 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-
Reverse Recovery Characteristic Reference Measurement Trj =7.40(ns) Trb= 3.20 (ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -9-