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SPICE MODEL of 1SS370 (Standard Model) in SPICE PARK

The document is a comprehensive device modeling report for the 1SS370 diode from Toshiba Bee Technologies, detailing its electrical characteristics and parameters for simulation in PSPICE. It includes simulation results for forward current, capacitance characteristics, and reverse recovery, along with comparative accuracy between simulation data and measurements. Key performance metrics such as saturation current, junction capacitance, and transit times are discussed with error percentages provided for validation.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: 1SS370 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
Forward Current Characteristic Circuit Simulation Result 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc D1 1SS370 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.00001 0.401 0.398 -0.75 0.00002 0.423 0.422 -0.24 0.00005 0.452 0.455 0.66 0.0001 0.482 0.480 -0.41 0.0002 0.500 0.504 0.80 0.0005 0.538 0.539 0.19 0.001 0.572 0.567 -0.87 0.002 0.602 0.599 -0.50 0.005 0.653 0.650 -0.459 0.01 0.695 0.696 0.144 0.02 0.745 0.7470 0.27 0.05 0.825 0.8230 -0.24 0.1 0.893 0.8920 -0.112 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
Capacitance Characteristic Circuit Simulation Result 1.6p 1.0p 0.2p 300mV 1.0V 10V 100V I(V2)/(200V/1u) V(N11360) Evaluation Circuit V2 0Vdc V2 = 200 V1 V1 = 0 D1 TD = 0 1SS370 TR = 1us TF = 10ns PW = 20us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
Comparison Graph Circuit Simulation Result Simulation Result Ct (pF) Vrev (V) %Error Measurement Simulation 0.3 1.325 1.321 -0.30 0.5 1.278 1.278 0.00 1 1.202 1.210 0.67 2 1.127 1.127 0.00 5 1.021 1.015 -0.59 10 0.935 0.933 -0.21 20 0.858 0.856 -0.23 50 0.763 0.760 -0.39 100 0.694 0.696 0.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 V2 = 11V D1 TD = 15ns 1SS370 TR = 15ns TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 27.20 27.04 -0.58 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
Reverse Recovery Characteristic Reference Measurement Trj =27.2(ns) Trb= 29.6(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-