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SPICE MODEL of D3SB80 (Standard Model) in SPICE PARK

This document presents a comprehensive device modeling report for the D3SB80 diode manufactured by Shindengen Bee Technologies. It includes circuit configurations, diode model parameters, forward current characteristics, junction capacitance characteristics, and reverse recovery characteristics, along with corresponding simulation results and measurement comparisons. The report emphasizes performance metrics such as saturation current, junction capacitance, and reverse breakdown voltage.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD MODEL PART NUMBER: D3SB80 MANUFACTURER: Shindengen Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration D1 DD3SB80 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V I(R1) V_V1 Evaluation circuit R1 0.01m V1 D1 D3SB80 0V 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result 10 Measurement Simulation Forword Current, IF (A) 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.750 0.748 -0.27 0.2 0.770 0.773 0.39 0.5 0.810 0.808 -0.25 1 0.840 0.839 -0.12 2 0.875 0.877 0.23 4 0.930 0.923 -0.75 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Junction Capacitance Characteristic Circuit Simulation result 100p 90p 80p 70p 60p 50p 40p 30p 20p 10p 100mV 1.0V 10V 100V I(V2)/(800V/1u) V(R) Evaluation circuit V2 R 0V V1 = 0 V1 D1 V2 = 800 D3SB80 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10ms 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result 100 Measurement 90 Simulation 80 Capacitance, C (pF) 70 60 50 40 30 20 10 0.1 1 10 100 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 89.748 89.900 0.17 0.2 85.335 85.317 -0.02 0.5 75.662 75.900 0.31 1 66.916 67.088 0.26 2 57.441 57.600 0.28 5 45.863 45.600 -0.57 10 38.075 37.800 -0.72 20 31.252 31.135 -0.37 50 23.868 24.063 0.82 100 19.424 19.800 1.94 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Reverse Recovery Characteristics Circuit Simulation result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 12us 16us 20us 24us 28us 32us 36us 40us 44us 48us 52us I(R1) Time Evaluation circuit R1 50 V1 = -9.23V V2 = 10.7V TD = 0us V1 D1 TR = 10ns D3SB80 TF = 10ns PW = 20us PER = 60us 0 Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj us 6.56 6.51 -0.76 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Reverse Recovery Characteristics Reference Trj = 6.56 (us) Trb = 4.96 (us) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9