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SPICE MODEL of S3L60 (Standard Model) in SPICE PARK

The document provides a detailed report on the device modeling of a standard diode rectifier model (S3L60) by Shindengen Bee Technologies Inc. It includes circuit simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, along with comparison graphs showing measurement versus simulation errors. Key parameters and their values such as junction potential, saturation current, and reverse breakdown voltage are also described.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: S3L60 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc D1 DS3L60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.732 0.727 -0.69 0.2 0.825 0.826 0.12 0.5 0.968 0.975 0.72 1 1.117 1.114 -0.30 2 1.294 1.293 -0.11 5 1.621 1.622 0.08 10 1.985 1.985 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
Capacitance Characteristic Circuit Simulation Result 200p 100p 10p 2.0p 500mV 1.0V 10V 100V I(V2)/(600V/1u) V(N11503) Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 600V D1 TD = 0 DS3L60 TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 0.5 91.820 94.506 2.93 1 78.510 79.309 1.02 2 63.500 64.459 1.51 5 46.100 46.117 0.04 10 33.900 34.803 2.66 20 25.140 25.931 3.15 50 16.800 17.485 4.08 100 12.500 12.958 3.66 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.96us 20.00us 20.04us 20.08us 20.12us I(R1) Evaluation Circuit Time R1 50 V1 = -9.1V V2 = 10.8V TD = 12ns V1 TR = 10ns D1 TF = 12ns DS3L60 PER = 50us PW = 20us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 18.00 17.59 -2.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
Reverse Recovery Characteristic Reference Measurement Trj =18.00(ns) Trb= 16.00(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-