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SPICE MODEL of CMH05A (Professional Model) in SPICE PARK

The document provides a detailed modeling report for the CMH05A diode manufactured by Toshiba Bee Technologies Inc., including parameters for PSpice simulations such as saturation current, series resistance, and breakdown voltage. It contains circuit simulation results for forward current characteristics, capacitance behavior, and reverse recovery characteristics, with accompanying comparison graphs and error percentages. The document is technical in nature and includes various measurements illustrated through graphical analysis.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL PART NUMBER: CMH05A MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 1.0V 2.0V 3.0V 3.8V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc CMH05A_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 1.232 1.196 -2.90 0.2 1.337 1.346 0.68 0.5 1.549 1.581 2.06 1 1.787 1.809 1.24 2 2.104 2.101 -0.13 5 2.668 2.624 -1.64 10 3.187 3.206 0.59 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
Capacitance Characteristic Circuit Simulation Result 100p 10p 1.0p 1.0V 10V 30V -I(X_U1.D_D1)/(400V/1u) V(N11503) Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 400 U1 TD = 0 CMH05A_P TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 1 9.200 9.233 0.36 2 7.400 7.675 3.72 5 5.650 5.908 4.57 10 4.580 4.796 4.71 20 3.720 3.890 4.57 30 3.300 3.443 4.33 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.94us 19.98us 20.02us 20.06us 20.10us 20.14us I(R1) Evaluation Circuit Time R1 50 V1 = -8.8V V2 = 11.4V TD = 12ns V1 TR = 8ns U1 TF = 12ns CMH05A_P PER = 50us PW = 20us 0 Compare Measurement vs. Simulation Measurement Simulation %Error Trj ns 9.20 9.02 -1.91 Trb ns 6.40 6.24 -2.49 Trr ns 15.60 15.27 -2.14 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
Reverse Recovery Characteristic Reference Measurement Trj =9.20(ns) Trb= 6.40(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-