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SPICE MODEL of IDD04S60C (Professional Model) in SPICE PARK

The document is a device modeling report for the Infineon silicon carbide Schottky diode (part number IDD04S60C). It includes detailed circuit configurations, model parameters, and simulation results for forward and reverse current characteristics, as well as junction capacitance characteristics. Comparison tables illustrate the accuracy of simulation results against measured values, highlighting minor errors in each case.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDD04S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 IDD04S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 8.0A 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDD04S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 1.07 1.092 2.06 1 1.214 1.196 -1.48 2 1.411 1.387 -1.70 5 1.914 1.929 0.78 8 2.466 2.459 -0.28 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDD04S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 200 1.270E-03 1.270E-03 0.00 400 1.250E-02 1.239E-02 -0.86 600 4.700E-01 4.497E-01 -4.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 200p 175p 150p 125p 100p 75p 50p 25p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDD04S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 152.78 154.009 0.81 1 138.89 139.748 0.62 2 119.45 120.987 1.29 5 93.06 92.839 -0.23 10 72.22 72.578 0.49 20 54.17 55.345 2.18 50 37.50 37.964 1.24 100 28.13 28.280 0.55 200 22.00 21.042 -4.35 600 13.70 13.098 -4.39 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9