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SPICE MODEL of SDB06S60 (Professional Model) in SPICE PARK

The document provides a detailed device modeling report for a silicon carbide Schottky diode (SDB06S60) manufactured by Infineon, including its circuit configuration and various model parameters. It presents simulation results for forward current, reverse current characteristics, and junction capacitance, along with comparison tables showing measurement versus simulation data. The content is copyrighted by Bee Technologies Inc., 2011.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SDB06S60 MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 SDB06S60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 12A 11A 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 SDB06S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.976 0.979 0.31 1 1.040 1.039 -0.10 2 1.140 1.140 0.00 5 1.420 1.414 -0.42 10 1.850 1.850 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 1.0mA 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 SDB06S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result 1.E+02 Measurement Simulation 1.E+01 Reverse Current, IR (A) 1.E+00 1.E-01 1.E-02 1.E-03 100 150 200 250 300 350 400 450 500 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.430E-03 1.466E-03 2.52 200 1.000E-02 9.656E-03 -3.44 500 3.100E+00 3.194E+00 3.04 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 250p 200p 150p 100p 50p 0 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 SDB06S60 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result 250 Measurement Simulation 200 Capacitance, C (pF) 150 100 50 0 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 1 220.000 220.351 0.16 2 180.000 180.393 0.22 5 128.300 128.072 -0.18 10 94.000 94.986 1.05 20 68.300 68.923 0.91 50 45.000 44.647 -0.78 100 31.600 31.941 1.08 200 23.300 22.781 -2.23 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9