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SPICE MODEL of IDH16S60C (Professional Model) in SPICE PARK

The document is a modeling report for the IDH16S60C silicon carbide Schottky diode, detailing its circuit parameters, characteristics, and simulation results. It includes graphs comparing measurement and simulation data for forward current, reverse current, and junction capacitance. The report is a comprehensive resource for understanding the diode's performance metrics and includes copyright information from Bee Technologies Inc.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDH16S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 IDH16S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 25A 20A 15A 10A 5A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDH16S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result 25 Measurement Simulation 20 Forword Current, IF (A) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 1 0.970 0.956 -1.40 2 1.010 1.014 0.43 5 1.150 1.158 0.67 10 1.370 1.375 0.36 25 2.000 1.997 -0.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit R1 1m V1 U1 IDH16S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result 10 Measurement Simulation Reverse Current, IR (A) 1 0.1 0.01 0.001 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 0.00290 0.00304 4.72 200 0.00470 0.00457 -2.75 500 0.29000 0.29405 1.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 800p 700p 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDH16S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result 800 Measurement 700 Simulation 600 Capacitance, C (pF) 500 400 300 200 100 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 770.000 761.334 -1.13 0.5 702.000 704.204 0.31 1 640.000 645.877 0.92 5 415.000 412.064 -0.71 10 320.000 305.219 -4.62 50 160.000 153.309 -4.18 100 120.000 125.621 4.68 500 98.000 99.932 1.97 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9