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SPICE MODEL of IDT16S60C (Professional Model) in SPICE PARK

The document summarizes the modeling of a silicon carbide Schottky diode from Infineon. It provides the part number, manufacturer, and component details. Simulation results are shown for the forward and reverse current characteristics, and junction capacitance characteristic. Tables compare the simulation and measurement values, showing good agreement within 5% error.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDT16S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 IDT16S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 25A 20A 15A 10A 5A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDT16S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result 25 Measurement Simulation 20 Forword Current, IF (A) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.937 0.940 0.38 1 0.982 0.978 -0.41 2 1.026 1.034 0.77 5 1.171 1.174 0.26 10 1.395 1.385 -0.67 25 1.974 1.989 0.79 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDT16S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result 10 Measurement Simulation Reverse Current, IR (A) 1 0.1 0.01 0.001 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 2.840E-03 2.976E-03 4.80 200 4.850E-03 4.678E-03 -3.55 500 2.800E-01 2.906E-01 3.79 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 800p 700p 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDT16S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result 800 Measurement Simulation 700 600 Capacitance, C (pF) 500 400 300 200 100 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 705.555 711.041 0.78 1 638.888 651.160 1.92 2 555.555 561.037 0.99 5 422.222 418.292 -0.93 10 323.333 311.322 -3.71 20 240.000 228.339 -4.86 50 161.111 157.503 -2.24 100 121.111 126.859 4.75 200 105.555 108.529 2.82 500 100.000 95.499 -4.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9