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SPICE MODEL of IDD09SG60C (Professional Model) in SPICE PARK

The document presents a device modeling report for a silicon carbide Schottky diode (part number: idd09sg60c) manufactured by Infineon. It includes circuit configurations, diode model parameters, forward and reverse current characteristics, as well as junction capacitance data, providing simulation results and measurement comparisons. The report details specific modeling values, circuit evaluations, and error percentages between measurements and simulations.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDD09SG60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 IDD09SG60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDD09SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result 20 Measurement 18 Simulation 16 Forword Current, IF (A) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.980 0.978 -0.18 1 1.040 1.037 -0.29 2 1.140 1.137 -0.26 5 1.400 1.406 0.43 10 1.830 1.834 0.22 20 2.675 2.671 -0.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 IDD09SG60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result 1.E+01 Measurement Simulation Reverse Current, IR (A) 1.E+00 1.E-01 1.E-02 1.E-03 100 200 300 400 500 600 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.450E-03 1.400E-03 -3.45 200 4.900E-03 4.790E-03 -2.24 400 1.030E-01 1.043E-01 1.26 600 2.500E+00 2.600E+00 4.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 350p 300p 250p 200p 150p 100p 50p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDD09SG60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result 350 Measurement Simulation 300 250 Capacitance, C (pF) 200 150 100 50 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.5 293.181 294.661 0.50 1 265.909 268.481 0.97 2 230.909 231.205 0.13 5 175.000 170.979 -2.30 10 133.000 128.509 -3.38 20 100.000 95.334 -4.67 50 66.000 66.562 0.85 100 52.000 53.710 3.29 200 43.660 45.804 4.91 500 38.125 39.962 4.82 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9