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SPICE MODEL of IDV02S60C (Professional Model) in SPICE PARK

The document provides a detailed modeling report for a silicon carbide Schottky diode (IDV02S60C) manufactured by Infineon, including key specifications and simulation results. It contains parameters like saturation current, series resistance, and reverse breakdown voltage, along with various circuit simulation outcomes comparing measurement and simulation results across different biasing conditions. Additionally, it features graphs illustrating forward current characteristics, junction capacitance characteristics, and reverse current characteristics with error analysis.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDV02S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Forward Current Characteristic Circuit Simulation Result 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc IDV02S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph Circuit Simulation Result 3 Measurement Simulation FORWARD CURRENT: IF(A) 2 1 0 0 1 2 3 4 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.1 0.910 0.920 1.11 0.2 0.980 0.990 1.05 0.5 1.150 1.141 -0.80 1 1.360 1.349 -0.85 2 1.740 1.728 -0.70 3 2.080 2.094 0.66 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Junction Capacitance Characteristic Circuit Simulation Result 60p 55p 50p 45p 40p 35p 30p 25p 20p 15p 10p 5p 0 1.0V 10V 100V 600V I(V2)/(600V/500n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 600 V1 U1 V1 = 0 IDV02S60C TD = 0 TR = 500ns TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph Circuit Simulation Result 60 Measurement Simulation 45 CAPACITANCE: C(pF) 30 15 0 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 1 59.980 59.833 -0.25 2 53.200 53.460 0.49 5 41.100 41.266 0.40 10 31.000 31.057 0.18 20 22.400 22.333 -0.30 50 14.900 14.812 -0.59 100 11.600 11.680 0.69 200 9.890 9.965 0.76 600 8.800 8.746 -0.61 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Characteristic Circuit Simulation Result 10uA 1.0uA 100nA 10nA 1.0nA 100pA 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 100m V1 U1 0Vdc IDV02S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph Circuit Simulation Result 1.E-05 Measurement Simulation 1.E-06 REVERSE CURRENT:IR(A) 1.E-07 1.E-08 1.E-09 1.E-10 100 200 300 400 500 600 REVERSE VOLTAGE：VR(V) Simulation Result IR(A) VR(V) Error (%) Measurement Simulation 100 1.44E-09 1.50E-09 4.40 200 2.90E-09 3.00E-09 3.29 300 6.20E-09 6.34E-09 2.20 400 1.85E-08 1.84E-08 -0.51 500 6.25E-08 6.28E-08 0.54 600 2.30E-07 2.31E-07 0.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010