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SPICE MODEL of CSD04060B (Professional Model) in SPICE PARK

The document provides a detailed modeling report for the silicon carbide Schottky diode part number CSD04060B, manufactured by Cree, Inc. It includes parameters such as saturation current, junction capacitance, and transit time, along with circuit simulation results demonstrating their performance in various conditions. Comparison graphs highlight measurement errors for forward current, junction capacitance, and reverse characteristics against simulation data.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: CSD04060B MANUFACTURER: Cree, Inc. REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 8.0A 6.0A 4.0A 2.0A 0A 0V 1.0V 2.0V 3.0V I(R1) V_V1 Evaluation Circuit CSD04060B R1 U4 PIN3 CASE 0.01m PIN2 NC V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VF(V) IF(A) Error(%) Measurement Simulation 0.1 0.940 0.938 -0.213 0.2 0.970 0.975 0.513 0.5 1.030 1.028 -0.195 1 1.100 1.110 0.901 2 1.250 1.245 -0.402 5 1.650 1.648 -0.121 8 2.050 2.070 0.966 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result 150p 100p 50p 0 3.0V 10V 100V 400V I(V2)/(600V/1us) V(N00016) Evaluation Circuit NC 0Vdc V2 PIN2 CASE PIN3 V2 = 600 V1 V1 = 0 TD = 0 TR = 1us TF = 10ns PW = 50us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) VR(V) Error(%) Measurement Simulation 3 141.000 141.400 0.283 5 122.000 121.700 -0.247 10 95.000 95.200 0.210 20 72.000 72.130 0.180 50 48.000 48.500 1.031 100 36.000 35.700 -0.840 200 26.000 25.980 -0.077 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result 100uA 80uA 60uA 40uA 20uA 0A 0V 200V 400V 600V I(R1) V_V1 Evaluation Circuit NC R1 PIN2 CASE 0.01m PIN3 U4 V1 CSD04060B 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VR(V) IR(uA) Error(%) Measurement Simulation 1 438.000 438.200 0.046 2 468.000 472.000 0.847 5 518.000 523.000 0.956 10 556.000 560.000 0.714 20 595.000 600.000 0.833 50 645.000 649.000 0.616 80 672.000 675.000 0.444 100 683.000 687.000 0.582 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005