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SPICE MODEL of CSD06060B (Professional Model) in SPICE PARK

The document provides a comprehensive device modeling report for the silicon carbide Schottky diode part number CSD06060B manufactured by Cree, Inc., including detailed PSpice model parameters such as saturation current, series resistance, and junction capacitance. It features simulation results comparing measurements with theoretical predictions for forward current characteristics, junction capacitance, and reverse characteristics. All simulations show the effectiveness of the model, with minor measurement errors across various parameters.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: CSD06060B MANUFACTURER: Cree, Inc. REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 12A 11A 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) V_V1 Evaluation Circuit R1 PIN3 CASE 0.01m PIN2 NC V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VF(V) IF(A) Error(%) Measurement Simulation 0.1 0.950 0.947 -0.317 0.2 0.970 0.974 0.411 0.5 1.030 1.026 -0.390 1 1.100 1.091 -0.825 2 1.200 1.204 0.332 4 1.400 1.408 0.568 5 1.500 1.511 0.728 6 1.630 1.620 -0.617 8 1.800 1.789 -0.615 10 2.000 1.988 -0.604 12 2.200 2.199 -0.045 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result 250p 200p 150p 100p 50p 0 3.0V 10V 100V 300V I(V2)/(600V/1us) V(N00016) Evaluation Circuit NC 0Vdc V2 PIN2 CASE PIN3 V2 = 600 V1 V1 = 0 TD = 0 TR = 1us TF = 10ns PW = 50us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result CJ(pF) VR(V) Error(%) Measurement Simulation 5 183.000 183.500 0.272 10 142.000 142.400 0.281 20 108.500 108.000 -0.463 50 73.000 73.300 0.409 100 54.000 53.988 -0.022 200 40.000 39.900 -0.251 300 33.000 33.200 0.602 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA 20uA 0A 0V 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit NC R1 PIN2 CASE 0.01m PIN3 V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VR(V) IR(uA) Error(%) Measurement Simulation 1 440.000 433.000 -1.617 2 460.000 460.100 0.022 5 497.000 498.000 0.201 10 520.000 526.000 1.141 20 550.000 556.000 1.079 50 590.000 594.000 0.673 100 623.000 622.584 -0.067 140 639.000 637.000 -0.314 200 657.000 651.000 -0.922 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005