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SPICE MODEL of TK40J60T (Standard+BDS Model) in SPICE PARK

The document provides a detailed report on the modeling of a Toshiba power MOSFET (TK40J60T) including specifications, circuit configurations, and simulation results for various electrical characteristics such as transconductance, charge characteristics, and switching times. It includes comparison tables of measured versus simulated data, highlighting the performance and accuracy of the model parameters. Additionally, the document outlines copyright information and simulation setups used in the testing.

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Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: TK40J60T MANUFACTURER: TOSHIBA Body Diode (Model Parameter) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Circuit Configuration D G S MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Transconductance Characteristic Circuit Simulation Result 20 Measurement Simulation 15 gfs 10 5 0 0 1 2 3 4 5 ID : Drain Current A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.010 0.320 0.333 4.063 0.020 1.000 1.000 0.000 0.050 1.660 1.667 0.422 0.100 2.400 2.500 4.167 0.200 3.222 3.333 3.445 0.500 6.000 6.250 4.167 1.000 8.333 8.333 0.000 2.000 11.111 11.111 0.000 5.000 16.667 16.667 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Vgs-Id Characteristic Circuit Simulation result 80A 64A 48A 32A 16A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TK40J60T Vv ariable 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Comparison Graph Circuit Simulation Result 80 Measurement Simulation 64 ID : Drain Current A 48 32 16 0 0 2 4 6 8 10 VGS : Gate to Source Voltage V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.000 4.850 4.950 2.062 1.000 5.000 5.201 4.020 2.000 5.150 5.307 3.049 5.000 5.430 5.524 1.731 10.000 5.750 5.781 0.539 20.000 6.100 6.175 1.230 50.000 7.000 7.067 0.957 80.000 7.750 7.792 0.542 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Rds(on) Characteristic Circuit Simulation result 30A 20A 10A 0A 0V 0.5V 1.0V 1.5V 2.0V I(V3) V_VDS Evaluation circuit V3 0Vdc U1 TK40J60T VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=20A, VGS=10V Measurement Simulation Error (%) R DS (on) () 0.068 0.068 0.074 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 PER = 1000u TK40J60T Dbreak PW = 600u W1 TF = 10n + D1 TR = 10n I2 - TD = 0 40Adc I2 = 1m W I1 = 0 I1 IOFF = 0.1mA ION = 0uA V1 400Vdc 0 Simulation Result VDD=400V,ID=40A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 25.000 25.000 0.000 Qgd(nc) 22.000 22.018 0.082 Qg(nc) 68.000 62.368 -8.282 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Capacitance Characteristic Measurement Simulation Simulation Result Cbd(nF) VDS(V) Error(%) Measurement Simulation 0.100 26.400 26.350 -0.19 0.200 25.500 25.510 0.04 0.500 21.600 21.610 0.05 1.000 18.900 18.920 0.11 2.000 16.650 16.600 -0.30 5.000 12.460 12.465 0.04 10.000 8.910 8.915 0.06 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Switching Time Characteristic Circuit Simulation result 12V 10V 0V 1.8us 2.0us 2.2us 2.4us 2.6us 2.8us V(2) V(3)/30 Time Evaluation circuit 3 L2 RL R1 L1 2 U1 TK40J60T 15 V1 = 0 50 V2 = 20 V2 VDD TD = 2u R2 300Vdc TR = 1n TF = 1n 50 PW = 2u PER = 10u 0 Simulation Result ID=20A, VDD=300V Measurement Simulation Error(%) VGS=10V Ton(ns) 120.000 124.967 4.139 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Output Characteristic Circuit Simulation result 80A 10V 8.0V 7.5V 64A 48A 7.0V 32A 6.5V 16A 6.0V VGS=5.5V 0A 0V 10V 20V 30V 40V 50V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 TK40J60T Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
BODY DIODE SPICE MODEL563 Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 TK40J60T 0Vdc U1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0 0.3 0.6 0.9 1.2 1.5 Drain Source voltage VDS(V) Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 1.000 0.680 0.681 0.147 2.000 0.710 0.710 -0.028 5.000 0.760 0.759 -0.132 10.000 0.820 0.815 -0.610 20.000 0.900 0.905 0.556 50.000 1.140 1.139 -0.088 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 14us 16us 18us 20us 22us 24us 26us 28us 30us 32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5V V1 V2 = 10.6V TD = 0.8u TR = 10ns TK40J60T TF = 19ns U1 PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(us) 3.120 3.120 0.006 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Reverse Recovery Characteristic Reference Trj=1.48(us) Trb=1.64(us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007