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Tsuyoshi Horigome, profile picture
Uploaded byTsuyoshi Horigome
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デバイスモデリングサービス(半導体部品分野)

The document discusses the development of silicon carbide power devices such as SiC MOSFETs and SiC JFETs. These devices offer several advantages over traditional silicon devices, including the ability to operate at higher temperatures, voltages, and switching frequencies. The document outlines the historical development and commercialization of SiC power devices from 2011 through 2020.

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IFIR 3 IFIR CMOS CMOS SiC PWM IC DCDC IC IC Junction FET IC SiC Junction FET IC IC IC MOSFET SiC MOSFET IFIR MOSFET 2011 4 20 MOSFET IFIR ESD ESD SiC MOSFET Gummel-Poon LED( ) BRT SiC MOSFET+BJT IGBT IC IFIR IGBT IFIR TFD(Thin Film Diode) FWD a-Si TFT TFT(Thin Film Transistor) poly-Si TFT 2011 4 20 .mmap - 2011/04/20 -