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SPICE MODEL of 2SK3435 (Standard+BDS Model) in SPICE PARK

This document details the modeling report for a power MOSFET (part number: 2SK3435) by NEC, including various parameters such as transconductance, source-drain resistance, and gate charge characteristics. The report presents simulation results alongside measurement comparisons for different electrical behaviors like drain current and switching times, highlighting measurement accuracy. It also includes specifics on the body diode and ESD protection characteristics with comprehensive circuit simulation data.

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Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SK3435 MANUFACTURER: NEC Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Transconductance Characteristic Circuit Simulation Result 60 55 50 45 40 35 gfs 30 25 20 15 10 Measurement 5 Simulation 0 1 3 5 7 9 11 13 15 17 19 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.1 2.500 2.500 0.000 0.2 3.950 4.000 1.266 0.5 7.000 7.143 2.043 1 8.900 9.091 2.146 2 12.400 12.600 1.613 5 20.500 20.833 1.624 10 29.000 29.412 1.421 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Vgs-Id Characteristic Circuit Simulation result 1.0A 0.5A 0A 1.0V 2.0V 3.0V 4.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U28 Vv ariable 2SK3435 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Comparison Graph Circuit Simulation Result 10.00 Measurement 9.00 Simulation 8.00 7.00 ID - Drain Current - A 6.00 5.00 4.00 3.00 2.00 1.00 0.00 0.0 1.0 2.0 3.0 4.0 5.0 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.1 2.390 2.404 0.586 0.2 2.400 2.434 1.417 0.5 2.450 2.492 1.714 1 2.500 2.557 2.280 2 2.600 2.649 1.885 5 2.800 2.833 1.179 10 3.000 3.040 1.333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Rds(on) Characteristic Circuit Simulation result 50A 40A 30A 20A 10A 0A 0V 200mV 400mV 500mV I(V3) V_VDS Evaluation circuit V3 0Vdc U28 VDS 2SK3435 10Vdc 0Vdc VGS 0 Simulation Result ID=40A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.011 0.011 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Gate Charge Characteristic Circuit Simulation result 20V 10V 0V 0 20n 40n 60n 80n 100n 120n 140n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U28 Dbreak PER = 1000u PW = 600u W1 2SK3435 TF = 10n + D1 TR = 10n I2 - TD = 0 80Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 48Vdc 0 Simulation Result VDD=48V,ID=80A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 10.000 10.230 2.300 Qgd(nC) 16.000 16.029 0.181 Qg 60.000 45.025 -24.958 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0.4us 0.8us 1.2us 1.6us 2.0us 2.4us 2.8us V(L2:1)/3 V(L1:2) Time Evaluation circuit L2 R2 18nH 0.75 U31 R1 L1 2SK3435 30nH V1 = 0 10 V1 V2 = 10 V2 30Vdc TD = 1u TR = 1n TF = 1n PW = 10u PER = 200u 0 Simulation Result ID=40 A, VDD=30V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 80.000 79.509 -0.614 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Output Characteristic Circuit Simulation result 20A 3.5.V 18A 16A 14A 12A 10A 3V 8A 6A 4A 2A VGS=2.5V 0A 0V 2V 4V 6V 8V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U30 2SK3435 Vv ariable 10Vdc 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
BODY DIODE Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 2SK3435 0Vdc U27 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Comparison Graph Circuit Simulation Result 10 Measurement Simulation Drain reverse current IDR(A) 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.600 0.600 0.000 0.2 0.625 0.622 -0.480 0.5 0.650 0.651 0.154 1 0.670 0.673 0.448 2 0.700 0.697 -0.429 5 0.735 0.733 -0.272 10 0.765 0.766 0.131 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 4.9us 5.0us 5.1us 5.2us 5.3us 5.4us 5.5us 5.6us 5.7us 5.8us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v D3435 TD = 265n TR = 10ns U28 TF = 19ns PW = 5us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(ns) 96.000 95.988 -0.013 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Reverse Recovery Characteristic Reference Trj=26.00(ns) Trb=70.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 2SK3435 100MEG U28 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007