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SPICE MODEL of IDH02SG120 (Professional Model) in SPICE PARK

The document is a device modeling report for the silicon carbide Schottky diode part number IDH02SG120 by Infineon. It includes detailed parameters for the diode model, circuit simulation results for forward and reverse current characteristics, and junction capacitance characteristics, along with comparison tables of measurement and simulation data. The report is copyrighted by Bee Technologies Inc. and contains circuit configurations and evaluation metrics.

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Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDH02SG120 MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
Circuit Configuration U1 IDH02SG120 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
Forward Current Characteristics Circuit Simulation result 8.0A 6.0A 4.0A 2.0A 0A 0V 2.0V 4.0V 6.0V 8.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDH02SG120 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.916 0.902 -1.53 0.2 1.000 0.959 -4.10 0.5 1.125 1.108 -1.51 1 1.334 1.341 0.52 2 1.750 1.791 2.34 5 3.042 3.121 2.60 8 4.500 4.442 -1.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV I(U1:K) V_V1 Evaluation circuit R1 0.01m V1 IDH02SG120 U1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 200 0.0030 0.0031 3.33 500 0.0200 0.0204 2.00 800 0.1320 0.1380 4.55 1200 1.8900 1.7959 -4.98 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
Junction Capacitance Characteristic Circuit Simulation result 150p 125p 100p 75p 50p 25p 0 1.0V 10V 100V 1.0KV I(V2)/(1200V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 V2 = 1200 IDH02SG120 TD = 0 U1 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 1 125.000 129.681 3.74 2 105.000 106.853 1.76 5 76.000 75.692 -0.41 10 56.500 56.840 0.60 20 41.500 41.819 0.77 50 27.000 27.224 0.83 100 19.500 19.535 0.18 200 14.000 14.002 0.01 500 9.400 8.984 -4.43 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9