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SPICE MODEL of L303EC in SPICE PARK

The document details the device modeling report for a pin diode (part number L303EC) manufactured by Litec Corporation, including specifications such as saturation current, junction capacitance, and breakdown voltage. It presents simulation results for forward current characteristics, junction capacitance, and reverse characteristics, with comparisons to measured values and associated errors. The document is protected by copyright from Bee Technologies Inc., 2005.

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Device Modeling Report COMPONENTS: PIN Diode PART NUMBER: L303EC MANUFACTURER: Litec Corporation Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 0.3V 1.0V 1.3V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc L303EC 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VF(V) IF(mA) Error(%) Measurement Simulation 1.000 0.660 0.661 0.152 2.000 0.690 0.692 0.290 5.000 0.735 0.734 -0.136 10.000 0.765 0.766 0.131 20.000 0.800 0.800 0.000 50.000 0.848 0.844 -0.472 100.000 0.880 0.882 0.227 200.000 0.925 0.926 0.108 500.000 1.010 1.010 0.000 1000.000 1.108 1.107 -0.090 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result 10p 1.0p 100f 1.0V 10V 100V I(V2)/(180V/1us) V(N12656) Evaluation Circuit V2 0Vdc V2 = 180 V1 U1 TD = 0 V1 = 0 L303EC TR = 1us PW = 50us TF = 10ns PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result Ct(pF) VR(V) Error(%) Measurement Simulation 1.000 2.180 2.106 -3.394 2.000 1.900 1.905 0.263 5.000 1.670 1.670 0.000 10.000 1.520 1.502 -1.184 20.000 1.380 1.359 -1.522 50.000 1.200 1.188 -1.000 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result 10nA 1.0nA 100pA 10pA 100mV 1.0V 10V 100V 1.0KV -I(V1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc L303EC 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result Simulation Result VR(V) IR(nA Error(%) Measurement Simulation 0.050 5.500 5.500 0.000 0.100 20.000 19.700 -1.500 0.200 43.000 42.300 -1.628 0.500 90.000 89.500 -0.556 0.600 105.000 105.000 0.000 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005