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SPICE MODEL of XBS104S13R-G (Professional Model) in SPICE PARK

The document is a device modeling report for the XBS104S13R-G Schottky rectifier from Torex Semiconductor, detailing its PSPICE model parameters, forward current characteristics, capacitance, and reverse recovery characteristics. It includes simulation results and comparative graphs highlighting the performance metrics such as forward current, inter-terminal capacitance, and reverse current with respective measurements and simulation errors. Copyrighted by Bee Technologies Inc., the report provides essential data for evaluating the component's electronic behavior.

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Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL PART NUMBER: XBS104S13R-G MANUFACTURER: TOREX SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 0V 200mV 400mV 600mV 800mV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc XBS104S13R-G_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
Comparison Graph Circuit Simulation Result 1 Measurement Simulation Forward Current:IF (A) 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Forward Voltage:VF (V) Simulation Result VF (V) IF (A) %Error Measurement Simulation 0.001 0.210 0.210 0.166 0.002 0.230 0.228 -0.786 0.005 0.253 0.252 -0.342 0.01 0.270 0.271 0.291 0.02 0.290 0.290 -0.033 0.05 0.315 0.317 0.478 0.1 0.340 0.340 0.004 0.2 0.370 0.368 -0.476 0.5 0.420 0.421 0.198 1 0.480 0.480 -0.037 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
Capacitance Characteristic Circuit Simulation Result 200p 150p 100p 50p 0 0V 10V 20V 30V 40V I(V2)/(40V/10n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 40 V1 U1 V1 = 0 XBS104S13R-G_P TD = 0 TR = 10ns TF = 10ns PW = 10us PER = 50us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
Comparison Graph Circuit Simulation Result 200 Measurement Inter-Terminal Capacity:Ct (pF) Simulation 150 100 50 0 0 10 20 30 40 Reverse Voltage:VR(V) Simulation Result Ct (pF) VR (V) %Error Measurement Simulation 0 130.500 124.446 -4.64 1 80.000 80.838 1.05 5 44.000 44.561 1.28 10 34.000 33.284 -2.11 15 28.000 27.925 -0.27 20 25.000 24.614 -1.54 25 22.000 22.335 1.52 30 21.000 20.589 -1.96 35 19.000 19.232 1.22 40 18.000 18.169 0.94 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
Reverse Recovery Characteristic Circuit Simulation Result 20mA 15mA 10mA 5mA 0mA -5mA -10mA -15mA -20mA 1.84us 1.92us 2.00us 2.08us 2.16us 2.24us I(R1) Time Evaluation Circuit R1 100 V2 = 1.27V V1 = -0.78V TD = 0ns V1 U1 TR = 1ns XBS104S13R-G_P PW = 2us TF = 1ns PER = 50us 0 Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trr ns 25.000 24.900 -0.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7
Reverse Characteristic Circuit Simulation Result 100uA 10uA 1.0uA 100nA 0V 10V 20V 30V 40V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc XBS104S13R-G_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 8
Comparison Graph Circuit Simulation Result 100.000 Measurement Simulation Reverse Current:IR (uA) 10.000 1.000 0.100 0 10 20 30 40 Reverse Voltage:VR (V) Simulation Result IR (uA) VR (V) %Error Measurement Simulation 1 0.4700 0.4565 -2.86 5 0.7100 0.7272 2.42 10 0.9200 0.9583 4.17 15 1.2000 1.1458 -4.52 20 1.4400 1.3714 -4.76 25 1.8000 1.7167 -4.63 30 2.3000 2.2620 -1.65 35 3.0500 3.0894 1.29 40 4.4000 4.2796 -2.74 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 9