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SPICE MODEL of XBS304S17R (Professional Model) in SPICE PARK

The document presents a detailed device modeling report for the schottky rectifier component XBS304S17R manufactured by Torex Semiconductor. It includes various circuit simulation results, such as forward current characteristics, capacitance characteristics, reverse recovery characteristics, and reverse current characteristics, along with error percentages compared to measurements. The report contains graphs and detailed parameters related to the performance of the diode under different conditions.

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Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL PART NUMBER: XBS304S17R MANUFACTURER: TOREX SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 0V 200mV 400mV 600mV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc XBS304S17R_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
Comparison Graph Circuit Simulation Result Simulation Result VF (V) IF (A) %Error Measurement Simulation 0.01 0.236 0.236 0.21 0.02 0.256 0.255 -0.53 0.05 0.280 0.280 -0.15 0.1 0.300 0.299 -0.39 0.2 0.320 0.320 -0.09 0.5 0.350 0.352 0.51 1 0.385 0.384 -0.30 2 0.428 0.430 0.48 3 0.470 0.469 -0.26 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
Capacitance Characteristic Circuit Simulation Result 500p 400p 300p 200p 100p 0 0V 10V 20V 30V 40V I(V2)/(45V/10n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 45 V1 U1 V1 = 0 XBS304S17R_P TD = 0 TR = 10ns TF = 10ns PW = 10us PER = 50us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
Comparison Graph Circuit Simulation Result 500 Measurement Simulation Inter-Terminal Capacity:Ct (pF) 400 300 200 100 0 0 10 20 30 40 Reverse Voltage:VR(V) Simulation Result Ct (pF) VR (V) %Error Measurement Simulation 0 308.000 296.176 -3.84 1 180.000 182.888 1.60 2 140.000 140.244 0.17 5 94.000 95.159 1.23 10 69.000 69.769 1.11 20 50.000 50.827 1.65 30 42.750 42.122 -1.47 40 37.500 36.818 -1.82 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
Reverse Recovery Characteristic Circuit Simulation Result 20mA 10mA 0A -10mA -20mA 1.6us 1.8us 2.0us 2.2us 2.4us 2.5us I(R1) Time Evaluation Circuit R1 100 V2 = 1.24V V1 = -0.76V TD = 3.0ns V1 U1 TR = 1.5ns XBS304S17R_P PW = 2us TF = 1.0ns PER = 50us 0 Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trr ns 82.000 82.211 0.26 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7
Reverse Characteristic Circuit Simulation Result 100uA 0 10uA 1.0uA 100nA 0V 10V 20V 30V 40V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc XBS304S17R_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 8
Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Reverse Current:IR (uA) 10.00 1.00 0.10 0 10 20 30 40 Reverse Voltage:VR (V) Simulation Result IR (uA) VR (V) %Error Measurement Simulation 1.00 1.600 1.618 1.14 2.00 1.828 1.813 -0.78 5.00 2.370 2.350 -0.84 10.00 3.120 3.134 0.45 20.00 4.700 4.678 -0.46 30.00 6.900 6.911 0.16 40.00 10.700 10.698 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 9
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 10