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SPICE MODEL of 2SK3062 (Standard+BDS Model) in SPICE PARK

The document presents a device modeling report for a MOSFET (part number 2SK3062) from NEC Corporation, detailing various model parameters and circuit characteristics including transconductance, drain current, gate charge, and switching time. It includes comparison tables between measurement and simulation results, highlighting discrepancies in performance metrics. The report also covers body diode characteristics and ESD protection, providing insights into the device's specifications and functional benchmarks.

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Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK3062 MANUFACTURER: NEC Corporation REMARK: Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Circuit Configuration Drain Gate U? Source MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Transconductance Characteristic s Circuit Simulation Result 40 Measurement 35 Simulation 30 TRANSCONDUCTANCE Gfs(s) 25 20 15 10 5 0 0 2 4 6 8 10 DRIAN CURRENT ID (A) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 0.1 4.000 4.089 2.222 0.2 5.714 5.854 2.450 0.5 8.929 9.070 1.584 1 12.500 12.705 1.640 2 17.544 17.830 1.631 5 27.624 27.888 0.955 10 38.462 38.756 0.766 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Vgs-Id Characteristics Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_VGS Evaluation circuit V2 U5 2SK3062 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID - Drain Current -A 10 1 0.1 1 1.5 2 2.5 3 VGS - Gate to Source Voltage - V Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.1 1.850 1.827 -1.227 0.2 1.880 1.849 -1.665 0.5 1.925 1.891 -1.761 1 1.980 1.939 -2.071 2 2.040 2.007 -1.613 5 2.160 2.143 -0.773 10 2.315 2.298 -0.721 20 2.515 2.521 0.219 50 2.900 2.972 2.469 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
*Rds(on) Characteristic Circuit Simulation result 35A 30A 25A 20A 15A 10A 5A 0A 0V 44.1mV 88.2mV 132.3mV 176.4mV 220.5mV I(V2) V_VDD Evaluation circuit V2 U5 2SK3062 VDD 10Vdc VGS 10Vdc 0 Simulation Result ID=35A, VGS=10V Measurement Simulation Error (%) R DS (on) 6.30 m 6.30 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 25n 50n 75n 100n V(W1:3) Time*1mA Evaluation circuit Vsense U1 2SK3062 I1 D1 Dbreak 70Adc W1 + - I2 W VDD ION = 0A 48Vdc IOFF = 1mA 0 Simulation Result VDD=48V,ID=70A Measurement Simulation Error (%) ,VGS=10V Qgs nC 13.00 13.00 -0.04 Qgd nC 30.00 29.99 -0.05 Qg nC 95.00 62.51 -34.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS(V) Error(%) Measurement Simulation 0.1 2.450 2.430 -0.816 0.2 2.380 2.360 -0.840 0.5 2.220 2.240 0.901 1 2.000 1.980 -1.000 2 1.700 1.680 -1.176 5 1.250 1.230 -1.600 10 0.900 0.910 1.111 20 0.650 0.630 -3.077 50 0.390 0.400 2.564 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Switching Time Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V -4V 0.675us 0.825us 0.975us 1.125us 1.275us 1.420us V(L3:2) V(Vsense:+)/3 Time Evaluation circuit Vsense RL 1.16 U1 V1 = 0 2SK3062 R1 L3 V2 = 20 TD = 1u 10 50nH VDD TR = 10n V1 30Vdc R2 TF = 10n 10 PW = 5u PER = 10u 0 Simulation Result ID=35A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td (on) ns 75.00 74.85 -0.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Output Characteristic Circuit Simulation result 250A 225A VGS=10V 200A VGS =10V VGS=4.0V 175A 150A 125A 100A 75A 50A 25A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(V2) V_VDS Evaluation circuit V2 U5 2SK3062 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.5V 2.0V I(V2) V_VGS Evaluation Circuit V2 U1 2SK3062 VGS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Comparison Graph Circuit Simulation Result 100 Measurement Simulation ISD - Diode Forward Current - A 10 1 0.1 0.4 0.6 0.8 1 1.2 VSD - Source to Drain Voltage - V Simulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.570 0.573 0.474 0.2 0.590 0.592 0.271 0.5 0.620 0.617 -0.484 1 0.640 0.638 -0.375 2 0.660 0.660 0.045 5 0.700 0.697 -0.429 10 0.740 0.736 -0.500 20 0.800 0.796 -0.450 50 0.930 0.946 1.720 100 1.180 1.173 -0.576 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 5.5us 5.7us 5.9us 6.1us 6.3us 6.5us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5V V2 = 10.5 TD = 80n V1 TR = 10n TF = 10n PW = 5.7us U1 2SK3062 PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 46.00 45.91 -0.20 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Reverse Recovery Characteristic Reference Measurement Trj=46.00(ns) Trb=162.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(V2) V_VGS Evaluation Circuit V2 U3 2SK3062 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007