Skip to main content
UploadLanguage (EN)Support
BusinessMobileSocial MediaMarketingTechnologyArt & PhotosCareerDesignEducationPresentations & Public SpeakingGovernment & NonprofitHealthcareInternetLawLeadership & ManagementAutomotiveEngineeringSoftwareRecruiting & HRRetailSalesServicesScienceSmall Business & EntrepreneurshipFoodEnvironmentEconomy & FinanceData & AnalyticsInvestor RelationsSportsSpiritualNews & PoliticsTravelSelf ImprovementReal EstateEntertainment & HumorHealth & MedicineDevices & HardwareLifestyle
Tsuyoshi Horigome, profile picture
Uploaded byTsuyoshi Horigome
193 views

SPICE MODEL of TPCA8028-H (Professional+BDSP Model) in SPICE PARK

This document provides a detailed modeling report for the Toshiba TPCA8028-H power MOSFET, including parameters such as transconductance, resistance, capacitance, and switching characteristics. It includes simulation results and comparisons with measurements, offering insights into performance metrics and characteristics of the MOSFET. Various characteristics such as gate charge, output, and reverse recovery characteristics are also documented with measurements and simulation errors.

Technology◦
Download to read offline
Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: TPCA8028-H MANUFACTURER: TOSHIBA Body Diode: Special Model Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 1.000 25.300 26.316 4.01 2.000 41.000 41.567 1.38 5.000 62.500 62.667 0.27 10.000 85.000 84.333 -0.78 20.000 117.000 116.048 -0.81 50.000 172.000 173.010 0.59 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGS Evaluation circuit Vsense U1 TPCA8028-H VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.260 2.317 2.531 2.000 2.320 2.347 1.155 5.000 2.400 2.407 0.271 10.000 2.480 2.475 -0.190 20.000 2.580 2.576 -0.167 40.000 2.720 2.724 0.132 60.000 2.840 2.842 0.063 80.000 2.950 2.945 -0.183 100.000 3.050 3.038 -0.407 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Rds(on) Characteristic Circuit Simulation result 25.0A 22.5A 20.0A 17.5A 15.0A 12.5A 10.0A 7.5A 5.0A 2.5A 0A 0V 10mV 20mV 30mV 40mV 50mV 60mV I(Vsense) V_VDS Evaluation circuit Vsense U1 TPCA8028-H VDS 10Vdc VGS 10Vdc 0 Simulation Result ID = 25A, VGS = 4.5V Measurement Simulation Error (%) R DS (on) m 2.300 2.300 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:3) Time*1mA Evaluation circuit Vsense W1 + I1 - D1 50Adc W Dbreak ION = 0A I2 IOFF = 1mA U1 TD = 0 TPCA8028-H 1m VD I1 = 0 24Vdc 0 Simulation Result VDD=24V, ID=50A, Measurement Simulation Error (%) VGS=10V Qgs nC 16.000 15.985 0.094 Qgd nC 12.000 11.970 0.251 Qg nC 88.000 86.970 1.184 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error(%) Measurement Simulation 0.100 2600.000 2590.000 0.386 0.200 2500.000 2550.000 -1.961 0.500 2300.000 2270.000 1.322 1.000 1980.000 2000.000 -1.000 2.000 1620.000 1618.000 0.124 5.000 1110.000 1090.000 1.835 10.000 800.000 790.000 1.266 20.000 510.000 520.000 -1.923 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Switching Time Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V -2V -4V 4.940us 4.980us 5.020us 5.060us 5.100us 5.136us V(2) V(3)/1.5 Time Evaluation circuit R1 L1 L2 2 3 4.7 30nH 50nH U1 V1 = 0 TPCA8028-H RL V2 = 20 V1 0.6 TD = 5u R2 TR = 10n TF = 10n 4.7 PW = 10u PER = 10m VDD 15.065Vdc 0 0 0 0 Simulation Result ID=25 A, VDD=15V Measurement Simulation Error(%) VGS=0/10V ton ns 16.000 16.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Output Characteristic Circuit Simulation result 8 6 5 4.5 100A 10 3.1 3.0 80A 2.9 60A 2.8 40A 2.7 20A VGS=2.5V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VDS Evaluation circuit Vsense U1 TPCA8028-H VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc TPCA8028-H 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 1.000 0.625 0.625 0.032 2.000 0.650 0.649 -0.231 5.000 0.680 0.681 0.147 10.000 0.710 0.709 -0.197 20.000 0.740 0.741 0.189 50.000 0.800 0.800 -0.012 100.000 0.860 0.861 0.128 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A -2.5A 1.04us 1.06us 1.08us 1.10us 1.12us 1.14us 1.16us 1.18us 1.20us 1.22us 1.24us I(R1) Time Evaluation Circuit R1 7 V1 = -15V PARAMETERS: TF = 0.14u V2 = 15V TD = 12n DTPCA8028-H U1 TR = 10ns TF = {TF} V1 VPULSE PW = 1us PER = 20us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 58.800 ns 58.677 ns -0.21 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Reverse Recovery Characteristic (Body Diode) Reference Trr=58.8ns Conditions: di/dt=30A/us All Rights Reserved Copyright (c) Bee Technologies Inc. 2008