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SPICE MODEL of TPCF8103 (Professional+BDP Model) in SPICE PARK

The document is a detailed device modeling report for a power MOSFET (TPCF8103) manufactured by Toshiba, including essential specifications, circuit configurations, and simulation results. It covers various performance characteristics such as transconductance, gate charge, capacitance, and switching times, comparing measurement and simulation data. Additionally, it provides error analysis and significant parameter values, ensuring comprehensive evaluation for design applications.

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Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCF8103 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Circuit Configuration Equivalent Circuit D S1 - - + + S S2 R2 DGD + - S + 10MEG - CGD R1 10M G Q1 S All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristic Circuit Simulation Result 10 9 8 7 6 gfs 5 4 3 2 Measurement Simulation 1 0 1 2 3 4 5 - ID - Drain Current - A Comparison table gfs - Id(A) Error(%) Measurement Simulation 0.1 1.300 1.333 2.538 0.2 2.000 2.000 0.000 0.5 3.100 3.125 0.806 1 4.300 4.333 0.767 2 5.800 5.882 1.414 5 9.200 9.434 2.543 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Vgs-Id Characteristic Circuit Simulation result -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V I(V3) V_V1 Evaluation circuit U10 V3 0Vdc V2 V1 -10 TPCF8103 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result 5 Measurement BeeTech 4 - ID - Drain Current - A 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 - VGS - Gate to Source Voltage - V Simulation Result - VGS(V) - ID(A) Error (%) Measurement Simulation 0.1 1.000 1.048 4.800 0.2 1.120 1.113 -0.625 0.5 1.250 1.230 -1.600 1 1.400 1.362 -2.714 2 1.600 1.564 -2.250 5 2.000 1.959 -2.050 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rds(on) Characteristic Circuit Simulation result -2.0A -1.5A -1.0A -0.5A 0A 0V -50mV -100mV -150mV -200mV I(V2) V_VDS Evaluation circuit U10 V2 0Vdc 0Vdc VDS VGS -4.5Vdc TPCF8103 0 Simulation Result ID=-1.4A, VGS=-4.5V Measurement Simulation Error (%) R DS (on) 0.072  0.072  0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Gate Charge Characteristic Circuit Simulation result 10V 8V 6V 4V 2V 0V 0 2n 4n 6n 8n 10n -V(W1:4) Time*1mA Evaluation circuit ION = 0uA IOFF = 1mA W U10 D2 I2 - I1 = 0 + 2.7 I1 Dbreak I2 = 1m W1 TD = 0 TPCF8103 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -16 0 Simulation Result VDD=-16V,ID=-2.7A Measurement Simulation Error (%) ,VGS=-5V Qgs(nC) -0.800 -0.799 -0.125 Qgd(nC) -2.000 -2.009 0.450 Qg -6.000 -6.050 0.833 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 40.000 40.746 1.865 0.2 38.000 38.545 1.434 0.5 33.000 33.000 0.000 1 27.000 27.600 2.222 2 20.000 20.400 2.000 5 12.000 12.000 0.000 10 7.000 7.300 4.286 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.10us 2.13us V(L1:2)*2 V(L2:1) Time Evaluation circuit U10 L2 R2 7.14 50nH -10Vdc RG L1 PER = 2000u V1 PW = 10u TF = 1n 30nH TR = 1n 4.7 R1 TPCF8103 TD = 2u V2 = 10 V2 4.7 V1 = 0 0 Simulation Result ID=-1.4A, VDD=-10V Measurement Simulation Error(%) VGS=-0/5V Ton(ns) 9.000 9.075 0.833 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristic Circuit Simulation result -10A -2.8 -3 -8A -6A -2 -4A -1.8 -2A VGS=-1.5 V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit U10 V3 0Vdc V2 V1 0 TPCF8103 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U25 TPCF8103 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation Drain reverse current IDR(A) 1.00 0.10 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result - VSD(V) - IDR(A) %Error Measurement Simulation 1 0.760 0.761 0.132 2 0.820 0.818 -0.244 5 0.930 0.930 0.000 10 1.070 1.069 -0.093 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 1.00us 1.04us 1.08us 1.12us 1.16us 1.20us I(R1) Time Evaluation Circuit R1 50 U25 V1 = -9.4v V1 V2 = 10.6v D8103 TD = 66n TR = 10ns TF = 9ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 7.000 7.044 0.629 Trb(ns) 12.500 12.500 0.000 Trr(ns) 19.500 19.544 0.226 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference Trj=7.000ns) Trb=12.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U25 0.01m R1 R2 TPCF8103 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006