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SPICE MODEL of 1R5GZ41 (Professional Model) in SPICE PARK

The document provides a device modeling report for a Toshiba diode (part number 1R5GZ41), focusing on various electrical characteristics such as saturation current, junction capacitance, and reverse breakdown voltage. It includes circuit simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, with detailed error measurements against simulations. The report emphasizes the accuracy of the modeling through comparative analysis and includes specific evaluation metrics alongside simulation data.

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Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL PART NUMBER: 1R5GZ41 MANUFACTURER: TOSHIBA REMARK: TC=25C Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m V1 0Vdc U1 D1R5GZ41 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.01 0.620 0.625 -0.76 0.02 0.648 0.651 -0.42 0.05 0.688 0.685 0.44 0.1 0.714 0.711 0.43 0.2 0.740 0.737 0.42 0.5 0.772 0.771 0.10 1 0.802 0.797 0.60 2 0.824 0.823 0.10 5 0.850 0.858 -0.99 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V2 = 400 V1 V1 = 0 TD = 0 TR = 10ns TF = 50ns PW = 5us PER = 10us U1 D1R5GZ41 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) Measurement Simulation %Error 0 145.899 145.899 0.000 0.1 135.250 135.247 0.002 0.2 127.750 127.755 -0.004 0.5 107.210 107.207 0.003 1 89.175 89.147 0.031 2 72.147 72.147 0.000 5 51.744 51.744 0.000 10 39.000 38.416 1.497 20 28.610 28.416 0.678 50 18.891 18.391 2.647 100 13.900 14.265 -2.626 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Circuit Simulation Result 200mA 0A -200mA 15us 20us 25us 30us I(R1) Time Evaluation Circuit R1 50 V1 = -9.2 V1 V2 = 10.7V U1 TD = 0 TR = 10ns D1R5GZ41 TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj 1.28 us 1.24 us 3.95 trb 2.68 us 2.58 us 3.73 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Reference Measurement Trj = 1.28(us) Trb= 2.68(us) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2004